January 26, 2005Applied Physics Letters

Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes

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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation J. K. Sheu, M. L. Lee, W. C. Lai; Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes. Appl. Phys. Lett. 31 January 2005; 86 (5): 052103. https://doi.org/10.1063/1.1861113 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

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Sheu et al. (2005) studied this question.

synapsesocial.com/papers/6a9034862a22b8e8a92da24c https://doi.org/10.1063/1.1861113

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Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes

Abstract

Discussion

Cite This Study

Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes

Abstract

Discussion

Cite This Study

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