1.1 kV 4H-SiC power UMOSFETs

Silicon Carbide (4H-SiC), power UMOSFETs were fabricated and characterized from room temperature to 200/spl deg/C. The devices had a 12-μm thick lightly doped n-type drift layer, and a nominal channel length of 4 μm. When tested under Fluorinert/sup TM/ at room temperature, blocking voltages ranged from 1.0 kV to 1.2 kV. Effective channel mobility ranged from 1.5 cm2/V.s at room temperature with a gate bias of 32 V (3.5 MV/cm) up to 7 cm2/V.s at 100/spl deg/C with an applied gate bias of 26 V (2.9 MV/cm). Specific on-resistance (R/sub on,sp/) was calculated to be as low as 74 m/spl Omega/.cm2at 100/spl deg/C under the same gate bias.