Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H–SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (1120) Face

The interface properties of 4H-silicon carbide (SiC) metal-oxide-semiconductor (MOS) capacitors and the electrical properties of MOS field-effect transistors (MOSFETs) on the (112̄0) face fabricated using pyrogenic reoxidation annealing (pyrogenic ROA) have been characterized. Pyrogenic ROA reduces the interface-state density near the conduction band, resulting in an increase in the inversion channel mobility and a decrease of the threshold voltage for the MOSFETs with both dry and wet gate-oxides. Eventually, a high channel mobility of 68 cm2/(V·s) was successfully achieved in a MOSFET with wet gate-oxide using the pyrogenic ROA. On the (112̄0) face, the channel mobility of MOSFETs strongly depends on the interface-state density near the conduction band.