Capacitance-voltage and capacitance-frequency characteristics of Al0.42Ga0.58N∕Al0.40Ga0.60N heterojunction p-i-n photodiode are investigated. The slopes of the 1∕C2-V plot were nearly the same at 100Hz, 1KHz, 10KHz, and 100KHz, slightly smaller at 1MHz. A depletion region width of 63.6nm calculated under zero bias for this diode was smaller than that of the intrinsic region, which showed that the intrinsic region was depleted partly under zero bias. The difference between the capacitance measured at low and high frequencies could be due to the high resistivity of the intrinsic region.
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Cheng et al. (2007) studied this question.
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