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April 8, 1996Applied Physics Letters

InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates

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Authors

Shuji Nakamura
Shuji NakamuraNEC (Japan)MSMasayuki SenohNichia Corporation (Japan)SNShin‐ichi NagahamaKyoto University

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Cite This Study

Nakamura et al. (1996) studied this question.

synapsesocial.com/papers/6a72ea2a82fd4d424b748858https://doi.org/10.1063/1.115599
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