Carrier/exciton localization in InGaN quantum wells (QWs) for green laser diodes fabricated on semi-polar {2021} GaN substrates is assessed using time-resolved photoluminescence (TRPL) spectroscopy. The estimated characteristic energy, which represents the localization depth in a {2021} InGaN QW, is 15.1 meV. This value is much smaller than that reported for c -plane green InGaN QWs, indicating a high compositional homogeneity of {2021} InGaN QWs and consequently suggesting that the GaN semi-polar {2021} plane is suitable for fabricating green laser diodes.
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Funato et al. (2010) studied this question.
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