Continuous-wave (CW) operations of semipolar (1 12 2) plane InGaN/GaN laser diodes (LDs) were demonstrated. The LD structures were grown on low extended defect density semipolar (1 12 2) GaN bulk substrates, using conventional metal organic chemical vapor deposition (MOCVD) at atmospheric pressure. The threshold current was 54 mA (6.5 kA/cm 2 ) for the CW operation [39 mA (4.6 kA/cm 2 ) for pulsed mode]. Stimulated emission was observed at 405.9 nm with a spectral line-width of 1 nm. These results indicate that semipolar (1 12 2) GaN is a promising orientation for the realization of blue-green and green LDs.
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Asamizu et al. (2009) studied this question.
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