Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 19, 1999Applied Physics Letters

AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

View Full Paper
Ask AI
Bookmark
Share

Authors

JSJ. SmartHexaTech (United States)ASA. SchremerMicronOptics (United States)NWNils WeimannUniversity of Duisburg-Essen

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Smart et al. (1999) studied this question.

synapsesocial.com/papers/6a903616fdaee66aea840571https://doi.org/10.1063/1.124384
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN1997 · 1,031 citations
  2. 2Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors1998 · 121 citations
  3. 3Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer1986 · 2,208 citations
  4. 4Scattering of electrons at threading dislocations in GaN1998 · 616 citations
  5. 5Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors1997 · 363 citations