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The oxidation mechanism of 4H-SiC in diluted N 2 O ambient was studied at various temperatures, N 2 O flow rates, and N 2 /N 2 O flow ratios. The collision partner, N 2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner.
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Tseng et al. (2017) studied this question.
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