Possible lifetime-limiting defect in 6H SiC

We reveal and investigate a possible lifetime-limiting defect in as-grown 6H SiC by optical detection of magnetic resonance (ODMR). This defect is shown to be a deep level center (with an energy level at about Ec−1.1 eV), evident from the related deep photoluminescence emission and a photo-excitation spectrum of the ODMR signal. The fact that this defect has been observed in both bulk crystals and epilayers, regardless of their doping type, indicates that this must be a common and basic defect in 6H SiC.