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Accurate band structures of ZnSb are obtained by the use of the empirical‐pseudopotential method. The top of the valence band is located at k = (0.93π/a, 0, 0) on the line Γ‐∑−X with symmetry ∑4 and the bottom of the conduction band is located at k = (0.47π/a, 0, 0) on the line Γ−∑−X with symmetry ∑1. The indirect energy gap is 0.60 eV. The interband transition gaps are assigned. A single ellipsoidal band model is presented for the explanation of the experiments of the magnetoresistance in p‐type materials.
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Y. Yamada (1978) studied this question.
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