GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

We report the effect of inserting a lattice‐matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice‐matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5‐pair AlInN/GaN DBR LED is about 3.6‐fold higher than that of the non‐DBR LED. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)