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March 1, 1996Japanese Journal of Applied PhysicsOpen Access

High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns

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Authors

KIKakuya IwataNational Institute of Advanced Industrial Science and TechnologyHAH. AsahiThe University of OsakaSYSoon Jae YuXinjiang University

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Iwata et al. (1996) studied this question.

synapsesocial.com/papers/6a903808aa54517f3533d6cbhttps://doi.org/10.1143/jjap.35.l289
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