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October 30, 2000Applied Physics Letters

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

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Authors

BHB. HeyingNorthrop Grumman (United States)ISI. P. SmorchkovaUniversity of California, Santa BarbaraCPC. PoblenzSoraa (United States)

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Heying et al. (2000) studied this question.

synapsesocial.com/papers/6a903810bcd42327600d2babhttps://doi.org/10.1063/1.1322370
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