InGaAlN and II–VI Systems for Blue–Green Light‐Emitting Devices

Recent progress in research on InGaAlN and II–VI systems has been remarkable, and this paper reviews the properties of these materials from the viewpoint of making reliable light‐emitting devices. The growth of these materials by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) is also reviewed, and the current status of both materials is reviewed with respect to light‐emitting devices.