Steady-state Nyquist theorem for multi-terminal nondegenerate semiconductor devices

Formulas for the spectral intensities of the short-circuit thermal noise currents in arbitrarily shaped multi-terminal semiconductor devices under dc bias are derived by solving the Langevin-type Boltzmann transport equations. The derived formulas are valid when the carrier distributions are not far from the local equilibrium distributions. Measurement data on short-circuit thermal noise currents are obtained for a three-terminal silicon bulk device. A comparison between the calculated and experimental results is made and thereby the validity of our theory is confirmed.