Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors

We report on observations of a correlation between the microstructure of organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance and gives a unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. We demonstrate that the 1∕f flicker noise is sensitive to organic semiconductor thin film microstructure changes in the transistor channel.