A polymer ferroelectric array embedded in an insulating paraelectric medium, with potential uses in nonvolatile memories, is fabricated by microimprinting poly(vinylidene fluoride) (PVDF) a patterned poly(dimethylsiloxane) with mold. The localized pressure induces a polymorphic transition into ferroelectric γ-type PVDF, whereas the unpressed raised areas (see figure) remain of the α type (paraelectric).
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Kang et al. (2007) studied this question.
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