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Au-ZnS electroluminescent cleaved {110} face Schottky barrier diodes with a peak omission in the blue region near 2.67 eV have been reproducibly prepared using 10 keV-energy S+ implantation, followed by nitrogen laser annealing. Preliminary progress is fairly encouraging, with a low drive voltage of about 3.7 volts for 50 mA drive current, and a room-temperature external quantum efficiency of 2×10-6. An operational mechanism of energetic hole injection from the Au electrode has been tentatively established, and is supported by some recent theoretical work.
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Lawther et al. (1980) studied this question.
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