High-speed InP/InGaAs heterojunction bipolar transistors

Very-high-performance common-emitter InP/InGaAs single heterojunction bipolar transistors (HBTs) grown by metalorganic molecular beam epitaxy (MOMBE) are reported. They exhibit a maximum oscillation frequency (f/sub T/) of 180 GHz at a current density of 1*10/sup 5/ A/cm/sup 2/. this corresponds to an (R/sub B/C/sub BC/)/sub eff/=f/sub T//(8 pi f/sup 2//sub max/) delay time of 0.12 ps, which is the smallest value every reported for common-emitter InP/InGaAs HBTs. The devices have 11 mu m/sup 2/ total emitter area and exhibit current gain values up to 100 at zero base-collector bias voltage. The breakdown voltage of these devices is high with measured BV/sub CEO/ and BV/sub CEO/ of 8 and 17 V, respectively.>