A compact, high-voltage AlGaAs/GaAs HBT was developed for applications in the Ku band using carbon-doped base structures. A single unit-cell device, operating under common-emitter mode and 10 V collector bias, produced 1.0 W CW output power at 15 GHz with 5.0 dB gain and 42% power-added efficiency. The power density of the device was a record 5.6 W/mm of emitter length.
No takes yet. Share an insight, caveat, or question.
Bartusiak et al. (1991) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: