Answers are grounded in this paper and cite their sources.
A comparison of the effects of gamma irradiation on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and gallium-arsenide (GaAs) HBT technologies is reported, DC and radiofrequency (RF) performance as well as the low frequency noise are investigated for gamma doses up to 1 Mrad(Si). The results indicate that both SiGe and GaAs HBT technologies are tolerant to gamma irradiation.
No takes yet. Share an insight, caveat, or question.
Zhang et al. (2000) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: