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October 1, 1968IEEE Transactions on Electron Devices

The temperature dependence of ideal gain in double diffused silicon transistors

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Authors

WKW. KauffmanFairchild Semiconductor (United States)ABA. A. BerghNTT (Japan)

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Cite This Study

Kauffman et al. (1968) studied this question.

synapsesocial.com/papers/6a9041632a22b8e8a92da63bhttps://doi.org/10.1109/t-ed.1968.16506
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