Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition

The electrical and structural properties of GaAs layers grown directly by metalorganic chemical vapor deposition on Si substrates oriented 2° off (100) toward [011] are reported. The uniformity of minority-carrier lifetime in the 2 in.- diam heteroepitaxial wafers is comparable to that in bulk GaAs of the same doping density (2×1016 cm−3). Selective etching of the GaAs layer reveals an etch pit density of ∼108 cm−2, consistent with plan view transmission electron microscopy which shows a defect density of ∼108 cm−2. Rapid annealing at 900 °C for 10 s does not significantly alter the heterointerface abruptness, and at the same time the crystalline quality of the GaAs improves slightly. The deep level concentration in the as-grown layer is ∼1013 cm−3 as determined by capacitance spectroscopy. Finally, the activation characteristics of low dose Si implants (3×1012 cm−2 at 60 keV) are similar to those in high quality bulk GaAs.