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September 29, 1986Applied Physics Letters

Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing

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NCNavin ChandPetronas (Malaysia)RPR. PeopleAlcatel Lucent (Germany)FBF. A. BaiocchiTexas Instruments (United States)

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Chand et al. (1986) studied this question.

synapsesocial.com/papers/6a70657a6c240de38cdbca1dhttps://doi.org/10.1063/1.97556
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