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Tin-doped GaAs layers on semi-insulating substrates have been grown by molecular beam epitaxy and made into field effect transistor devices by two different technologies. Best devices gave 5.6 dB gain with associated minimum noise of 3.3 dB at 10 GHz and showed no signs of hysteresis even without a buffer layer to reduce interface state densities.
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C. E. C. Wood (1976) studied this question.
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