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The recombination process has been investigated in semi-insulating GaAs Cr. The theoretical model was based on the Shockley–Read statistics considering two traps, the HL1 (Cr) and EL2, respectively. The trap concentrations and the carrier lifetimes have been determined from the dependence of both the photomagnetoelectric effect short-circuit current and the photoconductance on the illumination intensity.
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Papastamatiou et al. (1990) studied this question.
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