Measurements have been made of current density versus electric field on < 111 > and < 100 > oriented samples of n-Si at 77 K with resistivities ranging from 0.050 to 200 Ω cm. These have been analyzed to yield the concentration and field dependence of repopulation resulting from a < 100 > application of electric field. The magnitude of the repopulation has been found to be extremely sensitive to the free-carrier concentration. This sensitivity is attributed to the energy exchange effects of intervalley electron-electron scattering. The repopulation provides a new and highly selective experimental parameter for use in the study of electron-electron scattering in semiconductors.
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Nash et al. (1974) studied this question.
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