0.15-μm T-gate In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As InP-based HEMT with f max of 390 GHz

In this paper, 0.15-μm gate-length In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As InP-based high electron mobility transistors (HEMTs) each with a gate-width of 2 × 50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance ( g m,max ) values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage (BV GD ) defined at a gate current of −1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency ( f T ) of 164 GHz and a maximum oscillation frequency ( f max ) of 390 GHz are successfully obtained; moreover, the f max of our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high g m,max , BV GD , f max , and channel current collectively make this device a good candidate for high frequency power applications.