Extremely long capacitance transients in 6H-SiC metal-oxide-semiconductor capacitors

We have measured capacitance-time (C-t) transients on n-type 6H-SiC MOS capacitors to obtain information on the generation lifetime near the SiO2/SiC interface. At temperatures between 260 and 370 °C, the capacitance recovery transient is thermally activated with an activation energy of about 2.0 eV. Because of the wide band gap of SiC, these transients are extremely long. As a figure of merit, extrapolation of the high-temperature C-t data indicates a room-temperature recovery time of over 1010 yr.