A modified Deal Grove model for the oxidation of 4H-SiC is presented, which includes the removal of the carbon species. The model is applied to data on the oxidation rates for the (0001) Si, (0001̄) C, and (112̄0) a faces, which are performed in 1 atm dry oxygen and in the temperature range 950–1150 °C. Analysis within the model provides a physical explanation for the large crystal-face dependent oxidation rates observed.
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Song et al. (2004) studied this question.
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