The fabrication of thin laser structures by molecular beam epitaxy has placed stringent demands upon the techniques for characterizing these structures. An electrochemical etch originally developed by Norr is shown to be capable of well‐controlled etching of sub‐micron dimensions from Pb 1 − x Sn x Te surfaces. This allows material parameters, such as the doping level, to be measured as a function of depth.
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D. L. Partin (1981) studied this question.