High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The sheet resistance of 2-D electron gas in the UTB Al0.22Ga0.78N(5-nm)/GaN heterostructure is effectively reduced by SiNxpassivation grown by low-pressure chemical vapor deposition, from 2570 to334~Ω/□. The fabricated Al2O3/AlGaN/GaN MIS-HEMTs exhibit normally-OFF behavior with goodVTHuniformity and lowVTH-hysteresis. 20 mm-gate-width power devices featuring a lowR_ onof0.75~Ω(ID,MAX =6.5A) are also demonstrated on the platform.