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June 22, 2010Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Improved recess‐ohmics in AlGaN/GaN high‐electron‐mobility transistors with AlN spacer layer on silicon substrate

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Authors

SAS. ArulkumaranNagoya UniversityGNGeok Ing NgAgency for Science, Technology and ResearchSVS. VickneshApplied Materials (Singapore)

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Arulkumaran et al. (2010) studied this question.

synapsesocial.com/papers/6a978adc378ea914c1fac88fhttps://doi.org/10.1002/pssc.200983860
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