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March 24, 2016IEEE Transactions on Electron DevicesOpen Access

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

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TWTian‐Li WuNational Yang Ming Chiao Tung UniversityJFJ. FrancoIMECDMDenis MarconGC Europe (Belgium)

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Wu et al. (2016) studied this question.

synapsesocial.com/papers/6a905f2e6e7e048e0989d6cchttps://doi.org/10.1109/ted.2016.2539341
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