Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors

High-performance, ion-implanted GaAs metal-semiconductor field-effect transistors for operation in the frequency range 10–60 GHz have demonstrated noise figures of 1.15 dB at 12 GHz and 1.63 dB at 18 GHz. A single-stage amplifier has demonstrated a noise figure of 2.8 dB with 8.3-dB associated gain at 30 GHz and a gain of 6 dB at 60 GHz.