Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 1, 1986IEEE Transactions on Electron Devices

35-GHz performance of single and quadruple power heterojunction HEMT's

View Full Paper
Ask AI
Bookmark
Share

Authors

ESE.A. SoveroHRL Laboratories (United States)AGAditya GuptaFilm IndependentJHJ.A. HigginsStanford Health Care

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Sovero et al. (1986) studied this question.

synapsesocial.com/papers/6a906a33e02ba012352db8c8https://doi.org/10.1109/t-ed.1986.22691
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Millimeter-wave low-noise high electron mobility transistors1985 · 56 citations
  2. 2A microwave power double-heterojunction high electron mobility transistor1985 · 29 citations
  3. 3Low-noise high electron mobility transistors for monolithic microwave integrated circuits1985 · 17 citations
  4. 4Use of a superlattice to enhance the interface properties between two bulk heterolayers1983 · 96 citations
  5. 5Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxy1982 · 58 citations