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July 1, 1985IEEE Electron Device Letters

A microwave power double-heterojunction high electron mobility transistor

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Authors

KHK. HikosakaFujitsu (Japan)YHYasutake HirachiTokyo Institute of TechnologyTMT. MimuraKanazawa University

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Hikosaka et al. (1985) studied this question.

synapsesocial.com/papers/6a906a34e02ba012352db8cahttps://doi.org/10.1109/edl.1985.26148
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