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February 1, 1983Japanese Journal of Applied PhysicsOpen Access

Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlxGa1-xAs Heterostructure on the AlAs Mole Fraction

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Authors

JSJunji SaitoMitsui Chemicals (Japan)KNKazuo NanbuSumitomo Electric Industries (Japan)TITomonori IshikawaTokyo Medical and Dental University

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Saito et al. (1983) studied this question.

synapsesocial.com/papers/6a890321d5f4e697bb131957https://doi.org/10.1143/jjap.22.l79
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1High Electron Mobility Transistor Logic1981 · 122 citations
  2. 2Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures1981 · 40 citations
  3. 3Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface1958 · 488 citations
  4. 4A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions1980 · 802 citations
  5. 5Influence of AlAs mole fraction on the electron mobility of (Al,Ga)As/GaAs heterostructures1982 · 11 citations