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July 1, 1984IEEE Electron Device Letters

Two-dimensional numerical analysis of the high electron mobility transistor

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Authors

DWD. WidigerIBM (United States)KHK. HessInstitute for Advanced StudyJCJ. J. ColemanRutgers, The State University of New Jersey

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Widiger et al. (1984) studied this question.

synapsesocial.com/papers/6a906a3debb21526730d46bchttps://doi.org/10.1109/edl.1984.25913
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