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October 1, 1982Japanese Journal of Applied Physics

Current Transport in Modulation-Doped AlxGa1-xAs/GaAs Heterojunction Structures at Moderate Field Strengths

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Authors

MKM. KeeverBroadcom (United States)WKW. KoppNational Cancer InstituteTDT. J. DrummondUniversity of Groningen

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Keever et al. (1982) studied this question.

synapsesocial.com/papers/6a906aea2a22b8e8a92dae79https://doi.org/10.1143/jjap.21.1489
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Experimental and theoretical electron mobility of modulation doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy1981 · 54 citations
  2. 2Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices1981 · 173 citations
  3. 3High mobility GaAs-Al x Ga 1− x As single period modulation-doped heterojunctions1981 · 41 citations
  4. 4Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures1981 · 74 citations
  5. 5High mobilities in AlxGa1−xAs-GaAs heterojuntions1980 · 62 citations