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February 5, 1981Electronics Letters

High mobility GaAs-Al x Ga 1− x As single period modulation-doped heterojunctions

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Authors

LWL. WitkowskiRTX (United States)TDT. J. DrummondUniversity of GroningenSBScott A. BarnettNorthwestern University

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Witkowski et al. (1981) studied this question.

synapsesocial.com/papers/6a6fbd2178a11c550e097e5ehttps://doi.org/10.1049/el:19810090
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