The response of the AlGaN based radio-frequency (rf) sensor to deep ultraviolet (UV) illumination was investigated. Illumination by UV light emitting diodes with wavelengths from 280 to 375 nm significantly decreased rf oscillator frequency due to change in the impedance of AlGaN-based metal-semiconductor-metal structure. The UV-induced frequency shift attains 400 kHz from the oscillator dark frequency of 144.5 MHz with the highest sensitivity of 40 kHz/(μW/cm2) at 280 nm wavelength and UV power density less than 7.4 μW/cm2. The AlGaN-based rf oscillator allows for a wireless visible-blind and solar-blind UV sensing.
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Chivukula et al. (2010) studied this question.
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