A classical Monte Carlo (MC) device simulation has been modified to locally introduce the effects of electron degeneracy and nonequilibrium screening. Its validity in the case of AlInAs/GaInAs HEMTs has been checked through the comparison, first, with a quantum Schrodinger-Poisson (SP) simulation in the case of a complicated layer structure, which is actually used in the fabrication of real devices, and second, with experimental results of static characteristics of recessed /spl delta/-doped HEMTs.
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Mateos et al. (2000) studied this question.
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