The formation of pits in GaInN quantum wells (QWs) has been studied by atomic force microscopy and transmission electron microscopy. It is found that the pits have a hexahedron cone morphology with six sidewalls on 〈11̄01〉 planes and dislocations connected to their vertexes. The dislocations may induce the formation of pits during the growth of GaInN QWs.
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Chen et al. (1998) studied this question.
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