Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage

The luminescence properties of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with different quantum-well (QW) thicknesses were investigated. It is found that with decreasing the QW thicknesses, the integrated intensities of the photoluminescence (PL) and electroluminescence (EL) peaks demonstrate a contrary changing trend. The PL results show that the luminescence efficiency is improved by using thinner QWs. However, in the EL process, such a positive effect is counteracted by the low carrier injection efficiency in the thin QW LEDs, and consequently leads to a lower light output. Based on our experimental results, it is inferred that the tunneling leakage current associated with dislocations should be responsible for the low carrier-injection efficiency and the observed weaker EL integrated intensity of the LEDs with thin QWs.