LVV Auger spectra of Si, SiO2 and Si3N4 are discussed in terms of features of PES spectra and X-ray emission spectra of these materials. We show how the p-predominance in the valence bands contributes to the L2, 3VV spectra of the respective materials. We also show how departure from ideal stoichiometry in SiO2 and Si3N4 can be easily detected by the additional structure arising from free silicon in evaporated silicon oxide and CVD-nitrides.
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Johannessen et al. (1979) studied this question.
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