Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors

Power dissipation has become a major obstacle in performance scaling of modern integrated circuits and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect transistors taking semiconducting carbon nanotubes as the channel material. The on current of these devices is mainly limited by the tunneling barrier properties, and phonon-scattering has only a moderate effect. We show, however, that the off current is limited by phonon absorption assisted tunneling, and thus is strongly temperature dependent. Subthreshold swings below the 60mV∕decade conventional limit can be readily achieved even at room temperature. Interestingly, although subthreshold swing degrades due to the effects of phonon scattering, it remains low under practical biasing conditions.