GaInAsN-GaAs double quantum-well (DQW) laser structures emitting in the 1.5-/spl mu/m range were grown by solid source molecular beam epitaxy using a radio frequency plasma source for nitrogen activation. Lasing operation in the 1.5-/spl mu/m wavelength region has been realized for fabricated ridge waveguide laser diodes (LDs) under pulsed condition up to record high temperatures of 80/spl deg/C resulting in an emission wavelength of 1540 nm. This is the highest emission wavelength for laser diode operation based on GaAs. In addition, to investigate the optical properties of the active region, photoluminescence studies of underlying GaInAsN-GaAs QW structures emitting at wavelengths up to 1.55 /spl mu/m are presented.
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Fischer et al. (2001) studied this question.
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