1.3-μm-range highly strained GaInNAs-GaAs double quantum-well ridge stripe lasers with different In contents (37% and 39%) grown by metal-organic chemical vapor deposition are demonstrated. The GaInNAs laser with In content of 37% emitting at 1.294 μm exhibited both a low threshold current density of 1.0 kA/cm2at 20/spl deg/C and a high characteristic temperature of 148 K in the temperature range of 20/spl deg/C-80/spl deg/C.
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Sato et al. (1999) studied this question.
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